SOT-23 D 3
12 GS Configuration (Top View)
z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshol.
Standard Product WNM3003 is Pb-free.
Features
SOT-23 D 3
12 GS Configuration (Top View)
z Trench Technology z Supper.
The WNM3003 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion and power switch applications. Stand.
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